发明名称 |
NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE AND OPTICAL SEMICONDUCTOR DEVICE, AND METHODS FOR PRODUCING THE SAME |
摘要 |
A nitride semiconductor laminated structure comprises: a substrate; a first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material and ammonia as a Group V element source material, with the hydrogen concentration in the first p-type nitride semiconductor layer being 1x1019 cm-3 or less; and a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer by formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia and a hydrazine derivatives as Group V element source materials, with the carbon concentration in the second p-type nitride semiconductor layer being 1x1018 cm-3 or less.
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申请公布号 |
US2009236589(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20090404647 |
申请日期 |
2009.03.16 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
OHNO AKIHITO;TAKEMI MASAYOSHI;TOMITA NOBUYUKI |
分类号 |
H01L51/30;H01L51/40;H01S5/343 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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地址 |
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