发明名称 |
Method of fabricating a phase change memory and phase change memory |
摘要 |
The present invention relates to a phase change memory and a method of fabricating a phase change memory. The phase change memory includes a heater structure disposed on a phase change material pattern, wherein the heater structure is in a tapered shape with a bottom portion contacting the phase change material pattern. The fabrication of the phase change memory is compatible with the fabrication of logic devices, and accordingly an embedded phase change memory can be fabricated.
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申请公布号 |
US2009236583(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080053623 |
申请日期 |
2008.03.24 |
申请人 |
KUO CHIEN-LI;WU KUEI-SHENG;LIN YUNG-CHANG |
发明人 |
KUO CHIEN-LI;WU KUEI-SHENG;LIN YUNG-CHANG |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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