发明名称 |
Method for Producing Graphitic Patterns on Silicon Carbide |
摘要 |
In a method of making a vertical graphitic path on a silicon carbide crystal having a horizontal surface, a portion of the silicon carbide crystal is removed from the horizontal surface so as to define a vertical surface that is transverse to the horizontal surface of the silicon carbide crystal. The vertical surface is annealed so as to generate a thin-film graphitic layer on the vertical surface. In another method of making graphitic layers, a material that inhibits formation of a graphitic layer when the silicon carbide crystal is annealed is applied to a surface of a silicon carbide crystal so as to define at least one opening that exposes a portion of the surface of the silicon carbide crystal. The portion of the silicon carbide crystal is annealed so as to generate a thin-film graphitic layer in the portion of the silicon carbide crystal.
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申请公布号 |
US2009236608(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080165837 |
申请日期 |
2008.07.01 |
申请人 |
GEORGIA TECH RESEARCH CORPORATION |
发明人 |
DE HEER WALT A.;FIRST PHILLIP N. |
分类号 |
H01L21/3065;B32B3/30;H01L29/24 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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