发明名称 |
PROCESSING APPARATUS FOR PROCESSING A SUBSTRATE FOR SEMICONDUCTOR AND LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
<p>An apparatus for processing a substrate for a semiconductor and a liquid crystal display device is provided to prevent corrosion of a chamber due to plasma or a cleaning gas by forming a thermal spraying film in an inner wall of the chamber. A substrate is received in a chamber(11). A bell jar has a spherical surface part formed in a top direction of a cylindrical part. A gas discharge hole(61) supplies a process gas to an inner part of the chamber. A high frequency power source(66) supplies a high frequency power to an antenna. An exhaust pipe(62) is connected to an exhaust device which exhausts an inner part of the chamber. A film including 3a-group element compound having corrosion resistance about a corrosion gas is included.</p> |
申请公布号 |
KR20090098952(A) |
申请公布日期 |
2009.09.18 |
申请号 |
KR20090083065 |
申请日期 |
2009.09.03 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OTSUKI HAYASHI |
分类号 |
B01J19/00;H01L21/205;B01J19/08;C23C4/10;C23C16/44;C23C16/455;C23C16/507;C23C16/509;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
B01J19/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|