| 摘要 |
A method of manufacturing a semiconductor device and a semiconductor device manufactured thereby are provided. The method includes forming a molding layer on a substrate, forming support patterns spaced apart from each other on the molding layer, forming storage node electrodes penetrating the molding layer on sidewalls of the support patterns and wherein the storage node electrodes are supported by the support patterns. The method further includes removing the molding layer, forming a dielectric layer on the storage node electrodes, and forming a plate electrode on the dielectric layer.
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