METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

摘要

Disclosed is a method for producing a group III nitride semiconductor layer, which comprises a sputtering step wherein a substrate and a target containing a group III element are arranged in a chamber, while introducing a gas for plasma formation into the chamber, and a group III nitride semiconductor layer in which Si is added as a dopant is formed on the substrate by a reactive sputtering method. In this method, Si hydride is added in the gas for plasma formation.