SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS

摘要

A semiconductor device and a semiconductor device manufacturing method are provided to reduce the band-to-band tunneling phenomenon by making the distance between a first/second doping area and a gate pattern. An active area(140) is located on surface of a substrate region(110). A gate pattern(160) is located on surface of the active area. A first(180a) and a second impurity doping area(180b) are formed along both side edge of the active area. It is formed in order not to be overlapped with the gate pattern. The first and the second impurity doping area are narrowly formed along both side edge of the active area. The horizontal length of the first and the second impurity doping area is shorter than the vertical length of them.