| 摘要 |
<p>A semiconductor device and method for manufacturing the same are provided to prevent break of vertical type filler by make the upper part of the vertical type filler equal to the lower part. The vertical type filler(106) is formed on the semiconductor substrate(100). The spacer is formed in the filler side wall of the source/drain expectation region. The vertical type surrounding gate is formed in the filler side wall of the spacer bottom side. The gate insulating layer(108) is formed in the filler surface. The hard mask layer pattern(104) for defining the active region is formed in the semiconductor substrate. A part of the semiconductor substrate is etched by using the hard mask layer pattern as the etching mask.</p> |
