| 摘要 |
An apparatus for generating a repair signal of a non volatile memory device is provided to reduce the current consumption. A unit address fuse unit(500) comprises an address fuse unit activation unit(510), an address storage(520) and a repair signal output unit(530). According to the cutting state of fuse, the address fuse unit activation unit activates the unit address fuse unit. The address fuse unit activation unit comprises a first NMOS transistor, a fuse, an inverter, a second NMOS transistor and a capacitor type NMOS transistor. The address storage comprises a plurality of unit storages serially connected between the address activation unit and the repair signal output unit. According to the state of the address storage, the repair signal output unit outputs the repair.
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