| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof, reducing a reduction in drain current incidental to operating temperature rise in the semiconductor device having heterojunction of a nitride semiconductor layer. <P>SOLUTION: An HEMT 100 includes a semiconductor substrate 5 on which an undoped GaN layer 2 and an n-type AlGaN layer 4 are laminated in this order, a source electrode 6 and a drain electrode 10 formed on a surface of the semiconductor substrate 5 and a gate electrode 8 formed between the source electrode 6 and the drain electrode 10. A group of a plurality of recessed parts 14, each defining a first side face 12a extending in a direction of linking the source electrode 6 with the drain electrode 10 and a second side face 12b extending orthogonal to the first side face, is formed in the surface of the semiconductor substrate 5. The gate electrode 8 covers the first and second side faces 12a, 12b. In the HEMT 100, mesa-type conduction channels are connected in parallel. <P>COPYRIGHT: (C)2009,JPO&INPIT |
