| 摘要 |
PROBLEM TO BE SOLVED: To make an inclination of peaking of a gain in a high frequency band steep while suppressing an increase in area on a semiconductor integrated circuit and an increase in power consumption even at a low power supply voltage. SOLUTION: A source of a P-type field effect transistor M1 is connected to power supply potential VDD. A drain of the P-type field effect transistor M1 is connected to an output terminal out. A drain of an N-type field effect transistor M2 is connected to the power supply potential VDD. A source of the N-type field effect transistor M2 is connected to ground potential via a current source IB. A gate of the P-type field effect transistor M1 is connected to the source of the N-type field effect transistor M2. A gate of the N-type field effect transistor M2 is connected to the drain of the P-type field effect transistor M1 via a resistance element Rp. COPYRIGHT: (C)2009,JPO&INPIT
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