| 摘要 |
The present invention is a plasma etching method for etching a surface of a substrate in which a metal nitride film and a silicon film have been respectively formed on a first base film and a second base film that had been side-by-side arranged, with surfaces of the metal nitride film and the silicon film being exposed. At least a surface area of the silicon film is nitrided. A first etching plasma is supplied onto the surface of the substrate so as to etch the metal nitride film and to expose the first base film. A second etching plasma is supplied onto the surface of the substrate so as to etch the silicon film and to expose the second base film.
|
