| 摘要 |
A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.
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