发明名称 |
FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS AND METHOD FOR USING SAME |
摘要 |
A method for using a film formation apparatus includes, in order to inhibit metal contamination: performing a cleaning process using a cleaning gas on an inner wall of a process container and a surface of a holder with no productive target objects held thereon; and then, performing a coating process of forming a silicon nitride film by alternately supplying a silicon source gas and a nitriding gas to cover with the silicon nitride film the inner wall of the process container and the surface of the holder with no productive target objects held thereon.
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申请公布号 |
US2009233454(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20090401214 |
申请日期 |
2009.03.10 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OKADA MITSUHIRO;TONEGAWA YAMATO |
分类号 |
H01L21/316;B05C11/10;B05D7/22;H01L21/318 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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