| 摘要 |
A saddle fin transistor and a method for manufacturing the same are provided to prevent short channel effect from being generated in the edge area of the saddle fin by injecting oxygen ion into the edge area of the saddle fin. Element isolation films(110,120) defining active area are formed on a silicon substrate(100). The gate area of the active area is etched and a trench is created. The element isolation film which is adjacent to the bottom of the trench is etched and the saddle fin is formed. The edge area(180) of the saddle fin is etched. The gate oxidation film is formed in the active area including the saddle fin. The gate embedding the trench is formed.
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