发明名称 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A CAPACITOR AND THE SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
摘要 A manufacturing method of a semiconductor device with a capacitor is provided to prevent the leaning of storage node electrodes by forming a supporting patterns. A molding film is formed on a substrate(100). A support pattern(142) which each other is separated is formed on the molding film. A storage node electrode(148a) passing through the molding film is formed. The molding film is removed. A dielectric layer(160) is formed on the storage node electrodes and the support patterns. A plate electrode(162) is formed on the dielectric layer.
申请公布号 KR20090098550(A) 申请公布日期 2009.09.17
申请号 KR20080024009 申请日期 2008.03.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SEONG HO;NOH, JUN YONG
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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