发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A CAPACITOR AND THE SEMICONDUCTOR DEVICE MANUFACTURED THEREBY |
摘要 |
A manufacturing method of a semiconductor device with a capacitor is provided to prevent the leaning of storage node electrodes by forming a supporting patterns. A molding film is formed on a substrate(100). A support pattern(142) which each other is separated is formed on the molding film. A storage node electrode(148a) passing through the molding film is formed. The molding film is removed. A dielectric layer(160) is formed on the storage node electrodes and the support patterns. A plate electrode(162) is formed on the dielectric layer.
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申请公布号 |
KR20090098550(A) |
申请公布日期 |
2009.09.17 |
申请号 |
KR20080024009 |
申请日期 |
2008.03.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SEONG HO;NOH, JUN YONG |
分类号 |
H01L21/8242;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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