| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory system for reducing the write-in frequency of a NAND type flash memory using a multi-level memory cell, and for preventing its lifetime from being shortened. <P>SOLUTION: A management information storage part 154 is configured to, when receiving a standby, sleep, or reset signal, select the case of taking the snap-shot again, and shifting it to an instruction state (Fig.12(b)) or the case of not taking the snap-shot again, and shifting it to the instruction state (Fig.12(a)). <P>COPYRIGHT: (C)2009,JPO&INPIT |
