发明名称 PATTERNING PROCESS
摘要 <P>PROBLEM TO BE SOLVED: To provide a patterning process by which a reversal film material is filled into the gap in a positive resist pattern without causing damage to the pattern and high-accuracy positive/negative reversal is performed through simple steps. <P>SOLUTION: The patterning process using positive/negative reversal includes: coating a chemically amplified positive resist film-forming composition comprising a resin which has an acid labile group-bearing repeating unit and becomes soluble in an alkali developer, a photoacid generator or the photoacid generator and a thermal acid generator, and an organic solvent onto a substrate to be processed, and prebaking the composition to form a resist film; irradiating the resist film with high-energy radiation, post-exposure heating for bringing acid labile groups of the resin in an exposed portion into an elimination reaction, and developing the exposed resist film with an alkali developer to form a positive pattern; exposing or heating the positive pattern to eliminate the acid labile groups of the resin, thereby improving alkali solubility, and crosslinking the resin to impart resistance to an organic solvent used in a reversal film-forming composition; forming a reversal film with the reversal film-forming composition; and dissolving away the positive pattern with an alkaline wet etchant. The reversal film material can be filled into the gap in the positive resist pattern without causing damage to the pattern and high-accuracy positive/negative reversal can be performed through such simple steps. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009211036(A) 申请公布日期 2009.09.17
申请号 JP20080240270 申请日期 2008.09.19
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;YOSHIHARA TAKAO;ISHIHARA TOSHINOBU
分类号 G03F7/40;C08F220/26;G03F7/004;G03F7/039;G03F7/11;G03F7/20;H01L21/027 主分类号 G03F7/40
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