| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor light-emitting diode which is easily mounted and has high luminance and high heat dissipation property. <P>SOLUTION: In the compound semiconductor light-emitting diode 101, an element structural part 10, which includes a compound semiconductor layer of a first conductivity type, a light-emitting layer 13 made of aluminum gallium indium phosphide mixed crystals (composition formula (Al<SB>X</SB>Ga<SB>1-X</SB>)<SB>0.5</SB>In<SB>0.5</SB>P; 0=X<1), and a compound semiconductor layer having a conductivity type opposite the first conductivity type, is formed on a transparent substrate 25, a first ohmic electrode 1 is provided on the element structural part 10, a mesa 90 vertically sectioned in an inverted isosceles trapezoid shape is formed on the opposite side of the transparent substrate 25, a second ohmic electrode 5 is formed on a lower base surface 90b of the mesa 90, a metal coating film 6 is formed covering the mesa 90, and a base part 7, made of metal, which provides conduction with the second ohmic electrode 5 is formed covering the metal coating film 6. <P>COPYRIGHT: (C)2009,JPO&INPIT |
