发明名称 MEMORY SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a memory system for improving the reliability of data restoration while storing snap-shot and log in an NAND type flash memory using a multi-level memory cell. <P>SOLUTION: The memory system includes: a volatile first storing part; a nonvolatile second storing part; and a controller which performs data transfer, captures management information including the storage position of the data stored in the second storing part into the first storing part, and performs data management in the first and the second storage parts while updating the management information. The second storing part stores snap shot being the management information of the first storing part, a log 220 being the update difference information of the management information, and a second pointer 230 showing the storage positions of the snap shot and the log 220, and as for blocks 41 and 42 for log storage configuring the log storage region of the log 220, a block 41 for log storage is provided with a pointer for showing the position of a block 42 for log storage. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009211188(A) 申请公布日期 2009.09.17
申请号 JP20080051267 申请日期 2008.02.29
申请人 TOSHIBA CORP 发明人 YANO JUNJI;MATSUZAKI HIDENORI;HATSUDA KOSUKE
分类号 G06F12/16;G11C16/02 主分类号 G06F12/16
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