| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an infrared radiation element having a high response speed with respect to input power and for enhancing the output of infrared rays. <P>SOLUTION: The infrared radiation element is constituted so that a heater layer 3 is provided to the beam part 6 consisting of an insulating film stretched across a plurality of the places (two places) of the peripheral part of the recessed place 2 formed on one surface side of a semiconductor substrate 1 and infrared rays are radiated from the heater layer 3 by applying power to the heater layer 3. The recessed place 2 is formed by removing the porous part 13 formed by anodically oxidizing a part of one surface side of the semiconductor substrate 1, and the inner surface of the recessed place 2 constitutes a concave mirror 2a for reflecting the infrared rays radiated from the heat layer 3 in a desired infrared ray extraction direction. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
