发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor substrate increasing the number of semiconductor substrates to be taken from one bond substrate, and maintaining the quality of a semiconductor layer. SOLUTION: The semiconductor substrate which has a thicker semiconductor layer to be separated from a bond substrate is produced. Then, a plurality of semiconductor substrates is produced using the semiconductor substrate. By making thicker the semiconductor layer to be separated once from the bond substrate, the number of polishing process and heat treatment for the bond substrate can be reduced, so that it is suitable for reuse of the bond substrate. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009212387(A) 申请公布日期 2009.09.17
申请号 JP20080055415 申请日期 2008.03.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OKAMOTO TOMOHIRO
分类号 H01L21/02;H01L21/265;H01L27/12 主分类号 H01L21/02
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