| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for manufacturing a highly reliable transistor having little display failure by making a semiconductor film so that the grain size of each crystal grain is substantially uniform and the average grain size of crystal grains is a proper size without increasing the number of steps when forming the semiconductor film on a substrate using a disilane gas while using a CVD apparatus. SOLUTION: The method for manufacturing the semiconductor device includes: a step S1 of introducing the substrate into the CVD apparatus and placing it on a heater; a step S2 of heating the substrate up to a set film-forming temperature by heating the heater at 600-630°C; and a step S3 of introducing the disilane gas at the flow rate of 10-30 sccm into the CVD apparatus to form an a-si film on the substrate. COPYRIGHT: (C)2009,JPO&INPIT
|
