| 摘要 |
PROBLEM TO BE SOLVED: To provide a film which is adequate as an interlayer dielectric in a semiconductor element device or the like, capable of forming the film having a proper uniform thickness and excellent in film characteristics such as a dielectric constant, a Young's modulus or the like. SOLUTION: The film is formed by applying a composition for forming the film containing a divinylsiloxane bisbenzocyclobutene shown in general formula (1) and a silsesquioxane compound as a polymer of a cage type silsesquioxane compound and irradiating microwaves having a frequency of 5.8 GHz. COPYRIGHT: (C)2009,JPO&INPIT
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