发明名称 |
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND METHODS OF MANUFACTURING |
摘要 |
A semiconductor device having a tensile and/or compressive strain applied thereto and methods of manufacturing the semiconductor devices to enhance channel strain. The method includes relaxing a gate structure using a low temperature thermal creep process to enhance channel strain. The gate structure undergoes a plastic deformation during the low temperature thermal creep process.
|
申请公布号 |
US2009233455(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20080047379 |
申请日期 |
2008.03.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DYER THOMAS W. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|