Radiation detector for use in computed tomography device, for detecting e.g. X-ray radiation, has intermediate layer made from indium arsenide, indium phosphate, gallium antimonite, zinc oxide, gallium nitride, or silicon carbide

摘要

The detector (7) has an electronic component e.g. application specific integrated circuit, including an intermediate layer at a side facing a transducer layer. The intermediate layer is isolated from the component by a low pressure or vacuum based deposition process e.g. chemical vapor deposition. The intermediate layer is made of semiconductor material selected from one of indium arsenide, indium phosphate, gallium antimonite, zinc oxide, gallium nitride, silicon, silicon carbide, gallium arsenide, semiconductor structure-like material, amorphous carbon i.e. diamond like carbon, and ceramic. An independent claim is also included for a method for manufacturing a radiation detector.