| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflective mask blank for extreme ultraviolet (EUV) lithography in which the mask has low reflectance in a wavelength range of EUV light and pattern inspection light and has an absorbent layer that is easily controlled to a desired film composition and a film thickness. <P>SOLUTION: The reflective mask blank for EUV lithography has a reflection layer 12 reflecting EUV light and an absorbent layer 14 absorbing EUV light formed in this order on a substrate 11 wherein the absorbent layer contains tantalum (Ta) and hafnium (Hf), and the layer has a rate of an Hf content from 20 to 60 at%, a rate of a Ta content from 40 to 80 at% and a rate of an oxygen content of smaller than 25 at%. <P>COPYRIGHT: (C)2009,JPO&INPIT |
