| 摘要 |
PROBLEM TO BE SOLVED: To provide: a method of manufacturing a nitride-based semiconductor laser which replaces local impurity diffusion carried out so far for such materials that an impurity is not easily diffused like nitride-based semiconductor materials, for example, GaAlAs-based and AlGaInP-based materials, the manufacturing method being effective, good in precision, and suitable for mass production; and nitride-based semiconductor laser manufactured by the manufacturing method. SOLUTION: The method of manufacturing the nitride-based semiconductor laser includes a stage of preparing a substrate having an MQW active layer 4 formed of a nitride semiconductor containing In, a stage of selectively irradiating a light projection end surface of an MQW active layer 4 or a part nearby where the light projection end surface is expected to be formed, and a stage of performing a heat treatment thereafter. COPYRIGHT: (C)2009,JPO&INPIT
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