| 摘要 |
A semiconductor device and method for manufacturing the same are provided to prevent the electric signal fault caused by a residue by preventing the residue generated in a cutting process. A lower structure and the first interlayer insulating film(200) are formed in the semiconductor substrate. The fuse(210) is formed on the first interlayer dielectric. The air layer is formed in the top and lower part of fuse. The second intermetal dielectric(220) is formed on the air layer of the fuse. The hole(225) is formed in the second inter metal dielectric between the fuses which is adjacent to fuse. The fuse is separated from the upper part of the first interlayer dielectric in 100 ~ 1000 nm.
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