| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device reducing size error and variations of all openings, achieving ready design of a mask opening pattern and suppressing the increase of the manufacturing cost. SOLUTION: In the method of manufacturing the semiconductor device 200 in which the plurality of openings 21, 22 having different opening areas are formed by wet-etching in a surface protection film 1 of a non-photosensitive polyimide resin, in laying out the mask opening pattern for forming the plurality of openings 21, 22, a reference opening pattern 21a having an opening area smaller than the smallest opening area of the smallest opening 21 among the plurality of openings 21, 22 is set. The reference opening patterns 21a are laid out along outer peripheries of the openings 21, 22 inwards by a one-side etched amount L21 of the reference opening pattern 21a at intervals d1, d2 which are less than two times the one-side etched amount L21. COPYRIGHT: (C)2009,JPO&INPIT
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