| 摘要 |
PROBLEM TO BE SOLVED: To hold a stable operation by inhibiting progress of silicidation such that the silicidation reaches each tunnel insulating film of a selection gate transistor and a peripheral transistor when a control gate of a memory cell transistor is silicided in a nonvolatile semiconductor memory having the memory cell transistor, the selection gate transistor, and the peripheral transistor. SOLUTION: A nonvolatile semiconductor memory includes: a memory cell transistor; a selection gate transistor; and a peripheral transistor on a semiconductor substrate. In a second control gate of the selection gate transistor, a silicidation suppression film is formed so as to prevent silicidation from reaching an opening part of a second interlayer dielectric from the processed face of the second control gate. COPYRIGHT: (C)2009,JPO&INPIT
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