| 摘要 |
<p>A semiconductor device having elevated source-drain and a method for fabricating the same are provided to make single-crystal silicon grow through VLS(Vapor-Liquid-Solid) process using gold as catalyst, thereby forming the elevated source-drain at low temperature. A gate(13) is formed in an active area of a semiconductor substrate(11). A metal layer is formed on the source junction and drain junction on both sides of the gate. Silicon grows up in the source junction(16a) and the drain junction(16b) using the metal layer as catalyst. The metal layer is formed of gold at the thickness of 0.6~0.8nm and the upper side is filled with poly-silicon.</p> |
