发明名称 PHASE-CHANGE RANDOM ACCESS MEMORY AND BOOT BLOCK SETTING METHOD THEREOF
摘要 A phase change memory device and a boot block setting method thereof are provided to set a boot block size of a word unit, thereby reducing waste of a memory space. A phase change memory device(400) comprises a memory cell array(420). The memory cell array comprises a plurality of memory blocks(BLK 11~BLK n2). The phase change memory device stores boot data required for booting a part or all of memory blocks. The memory blocks storing boot data of the phase change memory device includes at least one setting unit(R1~R7). The setting unit forms a part or all of the memory blocks. The memory blocks corresponding to the setting units are formed. A size of a boot data storage area corresponds to the number of the setting units of the memory block having the boot data storage area.
申请公布号 KR20090098228(A) 申请公布日期 2009.09.17
申请号 KR20080023470 申请日期 2008.03.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 RO, YU HWAN;KIM, KWANG HO;LEE, KWANG JIN;CHOI, JOON YONG
分类号 G11C13/02 主分类号 G11C13/02
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