DRY ETCHING METHOD AND DRY ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To increase an etching rate and a resist selection ratio.

SOLUTION: A dry etching method of using a mixed gas of a plurality of fluorine-based gases as a process gas, generating plasma in a high vacuum while supplying the process gas and applying low frequency bias power to perform etching is provided to solve the problem.

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