| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN substrate with which a device having superior characteristics is manufactured with good reproducibility. <P>SOLUTION: The gallium nitride substrate is characterized in that a first intensity at a first peak of a wavelength corresponding to a band gap of gallium nitride in a spectrum of cathode luminescence obtained through irradiation with an electron of ≥13 kV in acceleration voltage is ≥2 times as large as a second intensity at a second peak observed on a longer-wavelength side than the first peak. <P>COPYRIGHT: (C)2009,JPO&INPIT |
