| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode adapted to ensure a stable quality and enhance the light output of an active layer. <P>SOLUTION: The group III nitride compound semiconductor light-emitting diode includes a substrate, a buffer layer, an N-type semiconductor material layer, an active layer, and a P-type semiconductor material layer. The active layer includes at least one quantum well layer, at least two barrier layers provided to sandwich the quantum well layer, and at least one stress relieving layer, while, of these layers, the stress relieving layer is provided between the quantum well layer and one barrier layer having a composition of the group III nitride compound material distributed to vary gradually starting from the quantum well layer toward the neighboring barrier layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
