MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an ohmic electrode of low contact resistance on the surface of a p-type nitride semiconductor processed by dry etching. SOLUTION: The manufacturing method of a semiconductor includes: a process of exposing the p-type region of a nitride semiconductor by dry etching; a cover layer forming process of forming a cover layer containing magnesium on the surface of the p-type region exposed by dry etching; an annealing process of annealing the nitride semiconductor on which the cover layer is formed; and an electrode forming process of forming the ohmic electrode on the surface of the p-type region where the cover layer is formed. COPYRIGHT: (C)2009,JPO&INPIT