发明名称 |
SEMICONDUCTOR DEVICE FORMED USING SINGLE POLYSILICON PROCESS AND METHOD OF FABRICATING THE SAME |
摘要 |
Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming a gate insulating layer on a part of an active region on a first conductivity type epitaxial layer; forming a conductive layer on the epitaxial layer; implanting high concentration impurities of a second conductivity type a first portion of the conductive layer on the gate insulating layer and second portions of the conductive layer on both sides of the first insulating layer; patterning the conductive layer; forming a second insulating layer on the epitaxial layer and high concentration impurity regions of the second conductivity type below the second conductive pattern; and implanting low-concentration impurities of the second conductivity type into the epitaxial layer between a gate structure and the high concentration impurity regions.
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申请公布号 |
US2009230481(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20090401693 |
申请日期 |
2009.03.11 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR, LTD. |
发明人 |
PARK JONG-HO;JEON CHANG-KI;PARK KYIJEONG |
分类号 |
H01L27/06;H01L21/28;H01L21/60;H01L21/70 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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