发明名称 |
Semiconductor device capable of suppressing short channel effect and method of fabricating the same |
摘要 |
A semiconductor device includes a semiconductor substrate including at least one memory channel region and at least one memory source/drain region, the memory channel region and the memory source/drain region being arranged alternately, and at least one word line on the memory channel region, wherein the memory source/drain region has a higher net impurity concentration than the memory channel region.
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申请公布号 |
US2009230451(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20090382385 |
申请日期 |
2009.03.16 |
申请人 |
LEE CHANG-HYUN;CHOI JUNG-DAL |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL |
分类号 |
H01L29/788;H01L29/66;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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