发明名称 |
Method of manufacturing nanocrystalline photovoltaic devices |
摘要 |
The photovoltaic structure comprises a thin film coating on a transparent substrate, the thin film comprising an effective amount of nanocrystalline silicon embedded in a matrix of amorphous and/or microcrystalline silicon. A transparent conducting oxide layer on a layer of non-conductive transparent oxide provides light-trapping capability as well as electrical conductivity where needed. A chemical vapor deposition ("CVD") reactor provides improved gas distribution to the substrates being coated in the reactor. An improved sputtering process and an improved RF plasma-enhanced CVD manufacturing method both using high levels of hydrogen in the hydrogen-silane mixture and high electrical power levels for the plasma to increase the speed and to lower the cost of manufacturing.
|
申请公布号 |
US2009229664(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20080077273 |
申请日期 |
2008.03.17 |
申请人 |
NANOPV TECHNOLOGIES INC. |
发明人 |
APPADURAI ANNA SELVAN JOHN |
分类号 |
H01L31/0264;H01L31/18;H05H1/24 |
主分类号 |
H01L31/0264 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|