发明名称 Method of manufacturing nanocrystalline photovoltaic devices
摘要 The photovoltaic structure comprises a thin film coating on a transparent substrate, the thin film comprising an effective amount of nanocrystalline silicon embedded in a matrix of amorphous and/or microcrystalline silicon. A transparent conducting oxide layer on a layer of non-conductive transparent oxide provides light-trapping capability as well as electrical conductivity where needed. A chemical vapor deposition ("CVD") reactor provides improved gas distribution to the substrates being coated in the reactor. An improved sputtering process and an improved RF plasma-enhanced CVD manufacturing method both using high levels of hydrogen in the hydrogen-silane mixture and high electrical power levels for the plasma to increase the speed and to lower the cost of manufacturing.
申请公布号 US2009229664(A1) 申请公布日期 2009.09.17
申请号 US20080077273 申请日期 2008.03.17
申请人 NANOPV TECHNOLOGIES INC. 发明人 APPADURAI ANNA SELVAN JOHN
分类号 H01L31/0264;H01L31/18;H05H1/24 主分类号 H01L31/0264
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