| 摘要 |
<p>Disclosed is a plasma processing apparatus wherein a processing chamber is maintained simply in a short time. Specifically, a plasma processing apparatus (1) is provided with a processing chamber (11); a base table (15) whereupon a silicon substrate (K) is to be placed; a gas supply apparatus (23) for supplying a processing gas into the processing chamber (11); a coil (26); a high frequency power supply (27) for the coil; and a heating apparatus (30) for heating an annular member (13a) of the processing chamber (11). The heating apparatus (30) is composed of an annular sheet body (31) and an annular supporting body (32), which are arranged as a double structure outside the annular member (13a); a heat generating body embedded in a sheet body (31); and a compressed air supplying apparatus (33). The sheet body (31) is composed of a heat resistant rubber, and the sheet body is arranged inside the supporting body (32) so that the inner circumferential surface is spaced apart from the outer circumferential surface of the annular member (13a), and the upper section and the lower section are adhered on the inner circumferential surface of the supporting body (32) so that an airtight space is formed with the supporting body (32). The compressed air supplying apparatus (33) supplies compressed air into the airtight space.</p> |
