| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to reduce the resistance of a bit line and facilitate patterning by forming a gate of a YI transistor and the bit line to be crossed. A YI transistor is formed on the upper part(302a) of a core region of a semiconductor substrate(300). A first landing plug(310a) and a second landing plug(310b) are formed at the upper part of the source and the drain region of the YI transistor. The storage electrode contact plug(314) is connected to the first landing plug. The bit line contact plug(312) is connected to the second landing plug. The bit line(316) is formed in the vertical direction to the gate of the YI transistor. The local input output line is connected to the storage electrode contact plug.
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