SEMICONDUCTOR DEVICE USING SINGLE POLYSILICON PROCESS AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device using single polysilicon process and a method of fabricating the same are provided to make the high voltage CMOS transistor by forming the drain region of an expanded LDD structure. The first insulating layer(141) is formed on one part of the active region of the substrate(100). The conductive film(143) is formed on the substrate and the first insulating layer. The highly doped impurity of the second conductive type is ion-implanted to the first part of the conductive film and the second parts of the conductive film at both sides of the first portion of dielectric layer. The highly doped impurity of the first conductivity type is ion-implanted to the third part of the conductive film separated from the second parts. The gate structure having the gate including the first part arranged on the first insulating layer and the first insulating layer is formed. The first conductive layer pattern(153) comprises the gate structure and the second parts.