| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory improving its ferroelectric capacitor characteristics more than a conventional one. SOLUTION: The semiconductor memory includes a MISFET 3 formed on a semiconductor substrate 1, a first interlayer insulating film 20 formed on the semiconductor substrate 1 having the MISFET 3 on it, a ferroelectric capacitor 30 having a lower electrode 33 connected to one source/drain region 10B of the MISFET 3 through a contact plug 26B, a ferroelectric film 34 having a PZT composition formula, and an upper electrode 35. A micro structure 75 whose height and size in the in-plane direction are both 1 to 50 nm is provided on the surface of the lower electrode 33. The lower ferroelectric film 34C constituting the ferroelectric film 34 includes a portion made of crystal grains which are different in at least one of composition, crystal orientation, and crystal grain size from the upper ferroelectric film 34D formed on the lower ferroelectric film 34C. COPYRIGHT: (C)2009,JPO&INPIT
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