METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device that has good adhesion between a silicon carbide substrate and a carbon layer and suppresses a deviation in composition of Si and C of a silicon carbide substrate surface after carbon layer removal. SOLUTION: The method of manufacturing the silicon carbide semiconductor device includes the stages of: (a) implanting impurity ions into base layers 1 and 2 made of silicon carbide; (b) forming the carbon layer 5 on the base layers 1 and 2 by heating in a pressure-reduced atmosphere after the stage (a); (c) forming a carbon deposit layer 6 on the carbon layer 5 formed in the stage (b); (d) performing annealing to activate the impurity ions after the stage (c); and (e) removing the carbon layer 5 and carbon deposit layer 6 after the stage (d). COPYRIGHT: (C)2009,JPO&INPIT