| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory comprising a charge storage layer with high uniformity. SOLUTION: The semiconductor memory is manufactured by laminating a first barrier layer 4 formed of Al<SB>2</SB>O<SB>3</SB>, a charge storage layer 5 formed of Al-excessive Al<SB>2</SB>O<SB>3</SB>with Si doped, a second barrier layer 6 formed of Al<SB>2</SB>O<SB>3</SB>, and a gate electrode 7 formed of n-type polysilicon in this order on a substrate 1 formed of n-type silicon. COPYRIGHT: (C)2009,JPO&INPIT
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