发明名称 PLASMA TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment device which suppresses the ununiformity of temperature distribution near the outermost periphery of a test piece and is achieved in the reduction of a cost of a product. SOLUTION: The plasma treatment device is provided with a sample stand 115 whose upper surface has a dielectric film 35 for electrostatic attraction and whose inside has the flow passage of a refrigerant which is formed therein, and plasma is formed above the sample stand to treat the test piece W disposed on the dielectric film 35. A first recess 31 and a second recess 34 through which heat transfer gas is supplied to the dielectric film 35 are formed while a first protrusion 31 and a second protrusion 33 are formed as electrostatic attraction surfaces. In this case, the flow rate of heat transfer gas which flows out along an arrow sign A is controlled by regulating a size L so as to permit the control of the temperature of a part protruded from the periphery of the sample stand 115 in the outer peripheral part of the test piece W independently from the temperature of a part except the outer peripheral part of the test piece W. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009212286(A) 申请公布日期 2009.09.17
申请号 JP20080053384 申请日期 2008.03.04
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 INOUE YOSHIHARU;AKIYAMA HIROSHI;KIHARA HIDEKI
分类号 H01L21/3065 主分类号 H01L21/3065
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