ELECTRODE FOR USE OF PLASMA TREATMENT EQUIPMENT, PLASMA TREATMENT EQUIPMENT, PLASMA TREATMENT METHOD, AND RECORDING MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide an upper electrode for use in an etching device capable of reducing electric field intensity of plasma at the center of a treated substrate and thus improving in-plane uniformity of plasma treatment, and the etching device including the upper electrode.

SOLUTION: A recess serving as a space for injecting a dielectric material is provided at the center of the upper electrode, and a dielectric material supply path for supplying the material to the space and a dielectric material discharge path for discharging the material are connected with each other. The dielectric material is supplied into the recess so that an in-plane distribution of electric field intensity is uniform depending on the in-plane distribution of the electric field intensity of the plasma generated under treatment conditions such as a type of a wafer to be etched and a treatment gas to be used.

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