发明名称 |
Double Patterning Strategy For Contact Hole and Trench in Photolithography |
摘要 |
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.
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申请公布号 |
US2009233238(A1) |
申请公布日期 |
2009.09.17 |
申请号 |
US20080047086 |
申请日期 |
2008.03.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU FENG-CHENG;CHEN JIAN-HONG |
分类号 |
G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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