摘要 |
<p>A method for patterning nanostructures in a semiconductor heterostructure, which has at least a first layer and a second layer, wherein the first layer has a first surface and an opposite, second surface, the second layer has a first surface and an opposite, second surface, and the first layer is deposited over the second layer such that the second surface of the first layer is proximate to the first surface of the second layer. The method includes the steps of making indentations in a pattern on the first surface of the first layer of the semiconductor heterostructure; bonding the semiconductor heterostructure to a support substrate such that the first surface of the first layer of the semiconductor heterostructure is faced to the support substrate; etching off the second layer of the semiconductor heterostructure; and depositing a third layer over the second surface of the first layer of the semiconductor heterostructure.</p> |
申请人 |
BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS;MALSHE, AJAY, P.;TAYLOR, CURTIS, R.;SALAMO, GREGORY;STACH, ERIC;PRINCE, ROBIN;WANG, ZHIMING |
发明人 |
MALSHE, AJAY, P.;TAYLOR, CURTIS, R.;SALAMO, GREGORY;STACH, ERIC;PRINCE, ROBIN;WANG, ZHIMING |